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MSC180SMA120S Microchip Technology
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MSC180SMA120S

Mfr. No: MSC180SMA120S
Mfr.: Microchip Technology
Category: SiC MOSFETs
Description: SiC MOSFETs MOSFET SIC 1200 V 180 mOhm TO-268
Datasheet: MSC180SMA120S Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 225mOhm @ 8A, 20V
Vgs(th) (Max) @ Id 3.26V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 20 V
Vgs (Max) +23V, -10V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D3PAK
Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,274
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 88 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

The MSC180SMA120S from Microchip Technology falls under the sic mosfets category. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 21A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 225mOhm @ 8A, 20V. This part has a typical lead time of 88 Days from factory and ships with a full manufacturer datasheet available for download. MSC180SMA120S is available through Simplytronix, sourced and verified for authenticity.

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