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MSCSM120HM31TBL2NG Microchip Technology
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MSCSM120HM31TBL2NG

Mfr. No: MSCSM120HM31TBL2NG
Mfr.: Microchip Technology
Category: MOSFET Modules
Description: MOSFET Modules PM-MOSFET-SIC-BL2
Lifecycle: Active
Datasheet: MSCSM120HM31TBL2NG Datasheet (PDF)
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel (Full Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 79A
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V
Power - Max 310W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -
📦 Product Attributes
Packaging
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,471
Units In Stock
📦
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🔑 Key Specifications
Category MOSFET Modules
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Microchip Technology's MSCSM120HM31TBL2NG is a widely used mosfet modules part in electronic designs. Technical specifications for this part include technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 79A and rds on (max) @ id, vgs: 31mOhm @ 40A, 20V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies MSCSM120HM31TBL2NG with same-day shipping and guaranteed authenticity.

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