*For representation only.
NV6012C-RA
| Mfr. No: | NV6012C-RA |
| Mfr.: | Navitas Semiconductor |
| Category: | GaN FETs |
| Description: | GaN FETs GaNFast Discrete 650V 450mOhm PQFN 56 |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 700 V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1.35A, 7V |
| Vgs(th) (Max) @ Id | 2.8V @ 2.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.85 nC @ 6 V |
| Vgs (Max) | +7V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 28 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 25.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-QFN (5x6) |
| Package / Case | 8-PowerVDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
3,068
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 182 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The NV6012C-RA from Navitas Semiconductor falls under the gan fets category. Among its key specs are FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 700 V, current, continuous drain (id) @ 25°C: 2.7A (Tc), drive voltage: 7V and rds on (max) @ id, vgs: 600mOhm @ 1.35A, 7V. This part has a typical lead time of 182 Days from factory. NV6012C-RA is available through Simplytronix, sourced and verified for authenticity.
