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NV6015C-RA Navitas Semiconductor
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NV6015C-RA

Mfr. No: NV6015C-RA
Mfr.: Navitas Semiconductor
Category: GaN FETs
Description: GaN FETs GaNFast Discrete 650V 150mOhm PQFN 56
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V
Rds On (Max) @ Id, Vgs 190mOhm @ 4A, 7V
Vgs(th) (Max) @ Id 2.6V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 6 V
Vgs (Max) +7V, -10V
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 400 V
FET Feature -
Power Dissipation (Max) 57W
Operating Temperature -55°C ~ 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-QFN (5x6)
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,488
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a gan fets component, the NV6015C-RA is manufactured and supplied by Navitas Semiconductor. Its datasheet lists FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 800 V, current, continuous drain (id) @ 25°C: 8A (Tc), drive voltage: 7V and rds on (max) @ id, vgs: 190mOhm @ 4A, 7V. This part has a typical lead time of 182 Days from factory. Simplytronix carries NV6015C-RA in stock, backed by a genuine parts guarantee and quick dispatch.

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