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BUK6Q8R2-30PJ Nexperia
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BUK6Q8R2-30PJ

Mfr. No: BUK6Q8R2-30PJ
Mfr.: Nexperia
Category: MOSFETs
Description: MOSFETs BUK6Q8R2-30P/SOT8002/MLPAK33
Datasheet: BUK6Q8R2-30PJ Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 15 V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package MLPAK33
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,764
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The BUK6Q8R2-30PJ, made by Nexperia, belongs to the mosfets product category. Technical specifications for this part include FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 82A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 8.2mOhm @ 12A, 10V. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks BUK6Q8R2-30PJ for same-day shipping with genuine parts guaranteed.

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