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GANB4R8-040CBAZ Nexperia
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GANB4R8-040CBAZ

Mfr. No: GANB4R8-040CBAZ
Mfr.: Nexperia
Category: GaN FETs
Description: GaN FETs GANB4R8-040CBA/SOT8086/WLCSP22
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 15.8 nC @ 5 V
Vgs (Max) 40V
Input Capacitance (Ciss) (Max) @ Vds 887 pF @ 20 V
FET Feature -
Power Dissipation (Max) 13W (Ta)
Operating Temperature -40°C ~ 125°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 22-WLCSP (2.1x2.1)
Package / Case 22-UFBGA, WLCSP
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,779
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle
Lead Time 28 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

GANB4R8-040CBAZ is a gan fets component manufactured by Nexperia. Among its key specs are FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 20A (Ta), drive voltage: 5V and rds on (max) @ id, vgs: 4.8mOhm @ 10A, 5V. This part has a typical lead time of 28 Days from factory. Simplytronix offers GANB4R8-040CBAZ in stock, verified authentic and ready for same-day dispatch.

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