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NSF017120T1A0-QHP Nexperia
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NSF017120T1A0-QHP

Mfr. No: NSF017120T1A0-QHP
Mfr.: Nexperia
Category: SiC MOSFETs
Description: SiC MOSFETs NSF017120T1A0-Q/SOT8114/QDPAK
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 111A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 26mOhm @ 71A, 18V
Vgs(th) (Max) @ Id 2.9V @ 7.1mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 4690 pF @ 800 V
FET Feature -
Power Dissipation (Max) 469W (Tc)
Operating Temperature -55°C ~ 175°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package QDPAK
Package / Case 22-PowerBSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,133
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle New Product
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
ℹ Product Overview

Nexperia manufactures the NSF017120T1A0-QHP, a sic mosfets part used in electronic assemblies. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 111A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 26mOhm @ 71A, 18V. This part has a typical lead time of 112 Days from factory. You can source NSF017120T1A0-QHP through Simplytronix, with fast shipping and verified authenticity.

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