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NSF030120L3A0Q Nexperia
*For representation only.

NSF030120L3A0Q

Mfr. No: NSF030120L3A0Q
Mfr.: Nexperia
Category: SiC MOSFETs
Description: SiC MOSFETs NSF030120L3A0/SOT429-2/TO247-3
Datasheet: NSF030120L3A0Q Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 45mOhm @ 40A, 18V
Vgs(th) (Max) @ Id 2.9V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 800 V
FET Feature -
Power Dissipation (Max) 306W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3L
Package / Case TO-247-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,986
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 56 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by Nexperia, the NSF030120L3A0Q is classified under sic mosfets. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 67A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 45mOhm @ 40A, 18V. This part has a typical lead time of 56 Days from factory and ships with a full manufacturer datasheet available for download. Get NSF030120L3A0Q from Simplytronix, shipped same day with a genuine parts guarantee.

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