*For representation only.
NSF060120L4A0Q
| Mfr. No: | NSF060120L4A0Q |
| Mfr.: | Nexperia |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs NSF060120L4A0/SOT8071/TO247-4L |
| Datasheet: | NSF060120L4A0Q Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 2.9V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1335 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 183W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-4 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 30 |
12,556
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
Nexperia manufactures the NSF060120L4A0Q, a sic mosfets part used in electronic assemblies. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 37A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 90mOhm @ 20A, 18V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. You can source NSF060120L4A0Q through Simplytronix, with fast shipping and verified authenticity.
