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PBSS3540MB,315 Nexperia
*For representation only.

PBSS3540MB,315

Mfr. No: PBSS3540MB,315
Mfr.: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PBSS3540MB/SOT883B/XQFN3
Lifecycle: Active
⚙ Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 50mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA, 2V
Power - Max 250 mW
Frequency - Transition 300MHz
Operating Temperature 150°C (TJ)
Grade Automotive
Qualification AEC-Q100
Mounting Type Surface Mount
Package / Case 3-XFDFN
Supplier Device Package DFN1006B-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,986
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 365 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210075
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

The PBSS3540MB,315 from Nexperia falls under the bipolar transistors - bjt category. This component is defined by transistor type: PNP, current, collector (ic): 500 mA, voltage, collector emitter breakdown: 40 V, vce saturation (max) @ ib, ic: 50mV @ 500µA, 10mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 200 @ 10mA, 2V. This part has a typical lead time of 365 Days from factory. PBSS3540MB,315 is available through Simplytronix, sourced and verified for authenticity.

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