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PBSS5230PAP,115 Nexperia
*For representation only.

PBSS5230PAP,115

Mfr. No: PBSS5230PAP,115
Mfr.: Nexperia
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PBSS5230PAP/SOT1118/HUSON6
Lifecycle: Active
⚙ Specifications
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 420mv @ 100mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A, 2V
Power - Max 510mW
Frequency - Transition 95MHz
Operating Temperature 150°C (TJ)
Grade Automotive
Qualification AEC-Q100
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
2,914
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 365 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541210000
USHTS 8541290055
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

PBSS5230PAP,115 is a transistors component manufactured by Nexperia. This part is specified with transistor type: 2 PNP (Dual), current, collector (ic): 2A, voltage, collector emitter breakdown: 30V, vce saturation (max) @ ib, ic: 420mv @ 100mA, 2A, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 160 @ 1A, 2V. This part has a typical lead time of 365 Days from factory. Simplytronix offers PBSS5230PAP,115 in stock, verified authentic and ready for same-day dispatch.

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