*For representation only.
PBSS5580PA,115
| Mfr. No: | PBSS5580PA,115 |
| Mfr.: | Nexperia |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT PBSS5580PA/SOT1061/HUSON3 |
| Datasheet: | PBSS5580PA,115 Datasheet (PDF) |
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Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 420mV @ 200mA, 4A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 2A, 2V |
| Power - Max | 2.1 W |
| Frequency - Transition | 110MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-PowerUDFN |
| Supplier Device Package | 3-HUSON (2x2) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
13,770
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
The PBSS5580PA,115, made by Nexperia, belongs to the bipolar transistors - bjt product category. Key specifications include transistor type: PNP, current, collector (ic): 4 A, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 420mV @ 200mA, 4A, current, collector cutoff: 100nA and DC current gain (hfe) (min) @ ic, vce: 140 @ 2A, 2V. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks PBSS5580PA,115 for same-day shipping with genuine parts guaranteed.
