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PMZB670UPE,315 Nexperia
*For representation only.

PMZB670UPE,315

Mfr. No: PMZB670UPE,315
Mfr.: Nexperia
Category: MOSFETs
Description: MOSFETs PMZB670UPE/SOT883B/XQFN3
Datasheet: PMZB670UPE,315 Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.14 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 87 pF @ 10 V
FET Feature -
Power Dissipation (Max) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DFN1006B-3
Package / Case 3-XFDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,545
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

PMZB670UPE,315 is a mosfets part produced by Nexperia for use across a range of applications. This part is specified with FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 20 V, current, continuous drain (id) @ 25°C: 680mA (Ta), drive voltage: 1.8V, 4.5V and rds on (max) @ id, vgs: 850mOhm @ 400mA, 4.5V. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Order PMZB670UPE,315 from Simplytronix for authenticated stock and same-day order processing.

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