*For representation only.
PSC1065B1AZ
| Mfr. No: | PSC1065B1AZ |
| Mfr.: | Nexperia |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes PSC1065B1/NBD2/UNCASED |
| Lifecycle: | Active |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Capacitance @ Vr, F | 340pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature - Junction | 175°C |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 8000 |
9,587
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
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Product Overview
The PSC1065B1AZ, made by Nexperia, belongs to the sic schottky diodes product category. Key specifications include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 10A, voltage, forward (vf) (max) @ if: 1.8 V @ 10 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 365 Days from factory. Simplytronix stocks PSC1065B1AZ for same-day shipping with genuine parts guaranteed.
