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PSMN1R1-100CSEJ Nexperia
*For representation only.

PSMN1R1-100CSEJ

Mfr. No: PSMN1R1-100CSEJ
Mfr.: Nexperia
Category: MOSFETs
Description: MOSFETs SOT8000 100V 430A
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 430A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.09mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 509 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 36460 pF @ 50 V
FET Feature -
Power Dissipation (Max) 1550W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package CCPAK1212i
Package / Case 12-BESOP (0.370", 9.40mm Width), Exposed Pad
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,378
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle New Product
Lead Time 365 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a mosfets component, the PSMN1R1-100CSEJ is manufactured and supplied by Nexperia. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 430A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 1.09mOhm @ 25A, 10V. This part has a typical lead time of 365 Days from factory. Simplytronix carries PSMN1R1-100CSEJ in stock, backed by a genuine parts guarantee and quick dispatch.

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