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PSMN1R2-80ASEJ Nexperia
*For representation only.

PSMN1R2-80ASEJ

Mfr. No: PSMN1R2-80ASEJ
Mfr.: Nexperia
Category: MOSFETs
Description: MOSFETs PSMN1R2-80ASE/SOT8000A/CCPAK12
Datasheet: PSMN1R2-80ASEJ Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 375A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.18mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 26187 pF @ 40 V
FET Feature -
Power Dissipation (Max) 935W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package CCPAK1212
Package / Case 12-BESOP (0.370", 9.40mm Width), Exposed Pad
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,779
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

PSMN1R2-80ASEJ is a mosfets component manufactured by Nexperia. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 375A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 1.18mOhm @ 25A, 10V. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers PSMN1R2-80ASEJ in stock, verified authentic and ready for same-day dispatch.

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