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PSMN2R6-80YSFX Nexperia
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PSMN2R6-80YSFX

Mfr. No: PSMN2R6-80YSFX
Mfr.: Nexperia
Category: MOSFETs
Description: MOSFETs PSMN2R6-80YSF/SOT1023/4 LEADS
Datasheet: PSMN2R6-80YSFX Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 231A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 127 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8191 pF @ 40 V
FET Feature -
Power Dissipation (Max) 294W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SOT-1023, 4-LFPAK
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,754
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The PSMN2R6-80YSFX from Nexperia falls under the mosfets category. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 231A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 2.4mOhm @ 25A, 10V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. PSMN2R6-80YSFX is available through Simplytronix, sourced and verified for authenticity.

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