| Mfr. No: | NSF040120T1A1-QHP |
| Mfr.: | Nexperia |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs NSF040120T1A1-Q/SOT8114/QDPAK |
| Datasheet: | NSF040120T1A1-QHP Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 30A, 18V |
| Vgs(th) (Max) @ Id | 2.9V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1984 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 217W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | QDPAK |
| Package / Case | 22-PowerBSOP Module |
| Packaging | Reel |
| Standard Pack Qty | 800 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
As a sic mosfets component, the NSF040120T1A1-QHP is manufactured and supplied by Nexperia. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 50A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 60mOhm @ 30A, 18V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries NSF040120T1A1-QHP in stock, backed by a genuine parts guarantee and quick dispatch.