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NSF040120T1A1-QHP Nexperia
*For representation only.

NSF040120T1A1-QHP

Mfr. No: NSF040120T1A1-QHP
Mfr.: Nexperia
Category: SiC MOSFETs
Description: SiC MOSFETs NSF040120T1A1-Q/SOT8114/QDPAK
Datasheet: NSF040120T1A1-QHP Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 60mOhm @ 30A, 18V
Vgs(th) (Max) @ Id 2.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1984 pF @ 800 V
FET Feature -
Power Dissipation (Max) 217W (Tc)
Operating Temperature -55°C ~ 175°C
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package QDPAK
Package / Case 22-PowerBSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,347
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle New Product
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
ℹ Product Overview

As a sic mosfets component, the NSF040120T1A1-QHP is manufactured and supplied by Nexperia. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 50A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 60mOhm @ 30A, 18V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries NSF040120T1A1-QHP in stock, backed by a genuine parts guarantee and quick dispatch.

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