| Mfr. No: | PMBT6429-QR |
| Mfr.: | Nexperia |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT PMBT6429-Q/SOT23/TO-236AB |
| Lifecycle: | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10mA, 5V |
| Power - Max | 250 mW |
| Frequency - Transition | 700MHz |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TO-236AB |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
The PMBT6429-QR from Nexperia falls under the bipolar transistors - bjt category. Among its key specs are transistor type: NPN, current, collector (ic): 100 mA, voltage, collector emitter breakdown: 45 V, vce saturation (max) @ ib, ic: 600mV @ 5mA, 100mA, current, collector cutoff: 10nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 500 @ 10mA, 5V. This part has a typical lead time of 365 Days from factory. PMBT6429-QR is available through Simplytronix, sourced and verified for authenticity.