*For representation only.
BFU530AVL
| Mfr. No: | BFU530AVL |
| Mfr.: | NXP Semiconductors |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors NPN wideband silicon RF transistor |
| Datasheet: | BFU530AVL Datasheet (PDF) |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 11GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1.8GHz |
| Gain | 12dB |
| Power - Max | 450mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 8V |
| Current - Collector (Ic) (Max) | 40mA |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 (TO-236AB) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 10000 |
11,674
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
Manufactured by NXP Semiconductors, the BFU530AVL is classified under rf bipolar transistors. It features transistor type: NPN, voltage, collector emitter breakdown: 12V, frequency, transition: 11GHz, noise figure: 1.1dB @ 1.8GHz, gain: 12dB and power, max: 450mW. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Get BFU530AVL from Simplytronix, shipped same day with a genuine parts guarantee.
