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A5G19H605W19NR3 NXP Semiconductors
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A5G19H605W19NR3

Mfr. No: A5G19H605W19NR3
Mfr.: NXP Semiconductors
Category: GaN FETs
Description: GaN FETs Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V
Lifecycle: Obsolete
Datasheet: A5G19H605W19NR3 Datasheet (PDF)
⚙ Specifications
Technology GaN
Configuration -
Frequency 1.93GHz ~ 1.995GHz
Gain 15.1dB
Voltage - Test 48 V
Current Rating (Amps) -
Noise Figure -
Current - Test 300 mA
Power - Output 85W
Voltage - Rated 125 V
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case OM-780-4S4S
Supplier Device Package OM-780-4S4S
📦 Product Attributes
Packaging Reel
Standard Pack Qty 250
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,427
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a gan fets component, the A5G19H605W19NR3 is manufactured and supplied by NXP Semiconductors. Key specifications include technology: GaN, configuration: -, frequency: 1.93GHz ~ 1.995GHz, gain: 15.1dB, voltage, test: 48 V and current rating: -. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries A5G19H605W19NR3 in stock, backed by a genuine parts guarantee and quick dispatch.

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