*For representation only.
A5G21H605W19NR3
| Mfr. No: | A5G21H605W19NR3 |
| Mfr.: | NXP Semiconductors |
| Category: | GaN FETs |
| Description: | GaN FETs Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V |
| Lifecycle: | Obsolete |
| Datasheet: | A5G21H605W19NR3 Datasheet (PDF) |
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Specifications
| Technology | GaN |
| Configuration | - |
| Frequency | 2.11GHz ~ 2.2GHz |
| Gain | 15.1dB |
| Voltage - Test | 48 V |
| Current Rating (Amps) | - |
| Noise Figure | - |
| Current - Test | 300 mA |
| Power - Output | 85W |
| Voltage - Rated | 125 V |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | OM-780-4S4S |
| Supplier Device Package | OM-780-4S4S |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 250 |
3,354
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 365 Days (from factory) |
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Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
A5G21H605W19NR3 is a gan fets component manufactured by NXP Semiconductors. Its datasheet lists technology: GaN, configuration: -, frequency: 2.11GHz ~ 2.2GHz, gain: 15.1dB, voltage, test: 48 V and current rating: -. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers A5G21H605W19NR3 in stock, verified authentic and ready for same-day dispatch.
