*For representation only.
2N3906BU
| Mfr. No: | 2N3906BU |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT PNP Transistor General Purpose |
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Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 625 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 10000 |
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Alternate / Replacement Parts
| Alternate Packaging | 2N3906TA |
| Suggested Replacement |
13,319
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 210 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
2N3906BU is a bipolar transistors - bjt part produced by onsemi for use across a range of applications. Key specifications include transistor type: PNP, current, collector (ic): 200 mA, voltage, collector emitter breakdown: 40 V, vce saturation (max) @ ib, ic: 400mV @ 5mA, 50mA, current, collector cutoff: - and DC current gain (hfe) (min) @ ic, vce: 100 @ 10mA, 1V. This part has a typical lead time of 210 Days from factory. Order 2N3906BU from Simplytronix for authenticated stock and same-day order processing.
