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2N4922G onsemi
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2N4922G

Mfr. No: 2N4922G
Mfr.: onsemi
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 3A 60V 30W NPN
Datasheet: 2N4922G Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 500mA, 1V
Power - Max 30 W
Frequency - Transition 3MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,534
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 133 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

2N4922G is a bipolar transistors - bjt part produced by onsemi for use across a range of applications. Technical specifications for this part include transistor type: NPN, current, collector (ic): 1 A, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: 600mV @ 100mA, 1A, current, collector cutoff: 500µA and DC current gain (hfe) (min) @ ic, vce: 30 @ 500mA, 1V. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. Order 2N4922G from Simplytronix for authenticated stock and same-day order processing.

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