*For representation only.
2N5550TAR
| Mfr. No: | 2N5550TAR |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
| Lifecycle: | Active |
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Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Power - Max | 625 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
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Product Attributes
| Packaging | Ammo Pack |
| Standard Pack Qty | 2000 |
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Alternate / Replacement Parts
| Alternate Packaging | 2N5550TA |
| Suggested Replacement |
8,360
Units In Stock
📦 Ammo Pack
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 196 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
onsemi's 2N5550TAR is a widely used bipolar transistors - bjt part in electronic designs. Key specifications include transistor type: NPN, current, collector (ic): 600 mA, voltage, collector emitter breakdown: 140 V, vce saturation (max) @ ib, ic: 250mV @ 5mA, 50mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 60 @ 10mA, 5V. This part has a typical lead time of 196 Days from factory. Simplytronix supplies 2N5550TAR with same-day shipping and guaranteed authenticity.
