| Mfr. No: | 2N5550TFR |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
| Datasheet: | 2N5550TFR Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Power - Max | 625 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Alternate Packaging | 2N5550TA |
| Suggested Replacement |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 196 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
The 2N5550TFR from onsemi falls under the bipolar transistors - bjt category. This part is specified with transistor type: NPN, current, collector (ic): 600 mA, voltage, collector emitter breakdown: 140 V, vce saturation (max) @ ib, ic: 250mV @ 5mA, 50mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 60 @ 10mA, 5V. This part has a typical lead time of 196 Days from factory and ships with a full manufacturer datasheet available for download. 2N5550TFR is available through Simplytronix, sourced and verified for authenticity.