| Mfr. No: | 2N5686G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 50A 80V 300W NPN |
| Datasheet: | 2N5686G Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 10A, 50A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 25A, 2V |
| Power - Max | 300 W |
| Frequency - Transition | 2MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-204AE |
| Supplier Device Package | TO-204 (TO-3) |
| Packaging | Tray |
| Standard Pack Qty | 100 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 140 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
2N5686G is a bipolar transistors - bjt component manufactured by onsemi. This component is defined by transistor type: NPN, current, collector (ic): 50 A, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 5V @ 10A, 50A, current, collector cutoff: 1mA and DC current gain (hfe) (min) @ ic, vce: 15 @ 25A, 2V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers 2N5686G in stock, verified authentic and ready for same-day dispatch.