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BC847BPDW1T3G onsemi
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BC847BPDW1T3G

Mfr. No: BC847BPDW1T3G
Mfr.: onsemi
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS SC88 GP XSTR DUAL 45V
Datasheet: BC847BPDW1T3G Datasheet (PDF)
⚙ Specifications
Transistor Type 1 NPN, 1 PNP
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging BC847BPDW1T1G
Suggested Replacement
3,982
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 294 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8532240000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

BC847BPDW1T3G is a bipolar transistors - bjt component manufactured by onsemi. Among its key specs are transistor type: 1 NPN, 1 PNP, current, collector (ic): 100mA, voltage, collector emitter breakdown: 45V, vce saturation (max) @ ib, ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA, current, collector cutoff: 15nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 200 @ 2mA, 5V. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers BC847BPDW1T3G in stock, verified authentic and ready for same-day dispatch.

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