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BC857BDW1T1G onsemi
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BC857BDW1T1G

Mfr. No: BC857BDW1T1G
Mfr.: onsemi
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 100mA 50V Dual PNP
Lifecycle: Active
⚙ Specifications
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,667
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 294 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

BC857BDW1T1G is a bipolar transistors - bjt part produced by onsemi for use across a range of applications. It features transistor type: 2 PNP (Dual), current, collector (ic): 100mA, voltage, collector emitter breakdown: 45V, vce saturation (max) @ ib, ic: 650mV @ 5mA, 100mA, current, collector cutoff: 15nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 220 @ 2mA, 5V. This part has a typical lead time of 294 Days from factory. Order BC857BDW1T1G from Simplytronix for authenticated stock and same-day order processing.

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