| Mfr. No: | BCP5316MTWG |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 80V 1A PNP WDFNW3 2X2 |
| Datasheet: | BCP5316MTWG Datasheet (PDF) |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Power - Max | 875 mW |
| Frequency - Transition | 130MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 3-WDFN Exposed Pad |
| Supplier Device Package | 3-WDFNW (2x2) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 210 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290055 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
onsemi manufactures the BCP5316MTWG, a bipolar transistors - bjt part used in electronic assemblies. This component is defined by transistor type: PNP, current, collector (ic): 1 A, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 500mV @ 50mA, 500mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 100 @ 150mA, 2V. This part has a typical lead time of 210 Days from factory and ships with a full manufacturer datasheet available for download. You can source BCP5316MTWG through Simplytronix, with fast shipping and verified authenticity.