*For representation only.
EMX1DXV6T1G
| Mfr. No: | EMX1DXV6T1G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 100mA 60V Dual NPN |
| Lifecycle: | Active |
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Specifications
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Power - Max | 500mW |
| Frequency - Transition | 180MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 4000 |
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Alternate / Replacement Parts
| Alternate Packaging | EMX1DXV6T5G |
| Suggested Replacement |
6,366
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 182 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
The EMX1DXV6T1G from onsemi falls under the transistors category. Among its key specs are transistor type: 2 NPN (Dual), current, collector (ic): 100mA, voltage, collector emitter breakdown: 50V, vce saturation (max) @ ib, ic: 400mV @ 5mA, 50mA, current, collector cutoff: 500nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 120 @ 1mA, 6V. This part has a typical lead time of 182 Days from factory. EMX1DXV6T1G is available through Simplytronix, sourced and verified for authenticity.
