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FDN86501LZ onsemi
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FDN86501LZ

Mfr. No: FDN86501LZ
Mfr.: onsemi
Category: MOSFETs
Description: MOSFETs N-Channel Shielded Gate PowerTrench MOSFET60 V, 2.6 A, 116 mO
Datasheet: FDN86501LZ Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 116mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 335 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,398
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Manufactured by onsemi, the FDN86501LZ is classified under mosfets. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 60 V, current, continuous drain (id) @ 25°C: 2.6A (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 116mOhm @ 2.6A, 10V. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. Get FDN86501LZ from Simplytronix, shipped same day with a genuine parts guarantee.

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