*For representation only.
FFSH2065BDN-F085
| Mfr. No: | FFSH2065BDN-F085 |
| Mfr.: | onsemi |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 650V 20A SIC SBD |
| Datasheet: | FFSH2065BDN-F085 Datasheet (PDF) |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
7,868
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541590000 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
FFSH2065BDN-F085 is a sic schottky diodes part produced by onsemi for use across a range of applications. Notable characteristics of this part include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, voltage, forward (vf) (max) @ if: 1.7 V @ 10 A, speed: No Recovery Time > 500mA (Io), reverse recovery time: 0 ns and current, reverse leakage @ vr: 40 µA @ 650 V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Order FFSH2065BDN-F085 from Simplytronix for authenticated stock and same-day order processing.
