| Mfr. No: | FFSP08120A |
| Mfr.: | onsemi |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 1200V SiC SBD 8A |
| Datasheet: | FFSP08120A Datasheet (PDF) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Capacitance @ Vr, F | 538pF @ 1V, 100kHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2L |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Tube |
| Standard Pack Qty | 50 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 147 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
The FFSP08120A from onsemi falls under the sic schottky diodes category. This component is defined by technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified: 8A, voltage, forward (vf) (max) @ if: 1.75 V @ 8 A, speed: Fast Recovery =< 500ns, > 200mA (Io) and current, reverse leakage @ vr: 200 µA @ 1200 V. This part has a typical lead time of 147 Days from factory and ships with a full manufacturer datasheet available for download. FFSP08120A is available through Simplytronix, sourced and verified for authenticity.