*For representation only.
FQA8N100C
| Mfr. No: | FQA8N100C |
| Mfr.: | onsemi |
| Category: | MOSFETs |
| Description: | MOSFETs 1000V N-Channe MOSFET |
| Datasheet: | FQA8N100C Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 225W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 450 |
5,303
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 133 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
FQA8N100C is a mosfets part produced by onsemi for use across a range of applications. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 1000 V, current, continuous drain (id) @ 25°C: 8A (Tc), drive voltage: 10V and vgs(th) (max) @ id: 5V @ 250µA. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. Order FQA8N100C from Simplytronix for authenticated stock and same-day order processing.
