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| Mfr. No: | NJVMJD112T4G |
| Mfr.: | onsemi |
| Category: | Darlington Transistors |
| Description: | Darlington Transistors BIP DPAK NPN 2A 100V TR |
| Lifecycle: | Active |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Power - Max | 20 W |
| Frequency - Transition | 25MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | Darlington Transistors |
| RoHS | |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The NJVMJD112T4G, made by onsemi, belongs to the darlington transistors product category. Its datasheet lists transistor type: NPN - Darlington, current, collector (ic): 2 A, voltage, collector emitter breakdown: 100 V, vce saturation (max) @ ib, ic: 3V @ 40mA, 4A, current, collector cutoff: 20µA and DC current gain (hfe) (min) @ ic, vce: 1000 @ 2A, 3V. This part has a typical lead time of 112 Days from factory. Simplytronix stocks NJVMJD112T4G for same-day shipping with genuine parts guaranteed.
