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| Mfr. No: | NJVMJD3055T4G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT BIP DPAK NPN 10A 60V TR |
| Lifecycle: | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 8V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Power - Max | 1.75 W |
| Frequency - Transition | 2MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
The NJVMJD3055T4G, made by onsemi, belongs to the transistors product category. This component is defined by transistor type: NPN, current, collector (ic): 10 A, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: 8V @ 3.3A, 10A, current, collector cutoff: 50µA and DC current gain (hfe) (min) @ ic, vce: 20 @ 4A, 4V. This part has a typical lead time of 112 Days from factory. Simplytronix stocks NJVMJD3055T4G for same-day shipping with genuine parts guaranteed.
