| Mfr. No: | NJVMJD44H11T4G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT SILICON Pwr TRANSISTOR |
| Lifecycle: | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 1V |
| Power - Max | 1.75 W |
| Frequency - Transition | 85MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 77 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
The NJVMJD44H11T4G from onsemi falls under the transistors category. Its datasheet lists transistor type: NPN, current, collector (ic): 8 A, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 1V @ 400mA, 8A, current, collector cutoff: 1µA and DC current gain (hfe) (min) @ ic, vce: 60 @ 2A, 1V. This part has a typical lead time of 77 Days from factory. NJVMJD44H11T4G is available through Simplytronix, sourced and verified for authenticity.