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NJVMJD45H11T4G-VF01 onsemi
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NJVMJD45H11T4G-VF01

Mfr. No: NJVMJD45H11T4G-VF01
Mfr.: onsemi
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BIP PNP 8A 80V TR
Lifecycle: Obsolete
Datasheet: NJVMJD45H11T4G-VF01 Datasheet (PDF)
⚙ Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
Power - Max 1.75 W
Frequency - Transition 90MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package DPAK
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging NJVMJD45H11G
Suggested Replacement
4,033
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant By Exemption
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290055
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

onsemi manufactures the NJVMJD45H11T4G-VF01, a transistors part used in electronic assemblies. Its datasheet lists transistor type: PNP, current, collector (ic): 8 A, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 1V @ 400mA, 8A, current, collector cutoff: 1µA and DC current gain (hfe) (min) @ ic, vce: 40 @ 4A, 1V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source NJVMJD45H11T4G-VF01 through Simplytronix, with fast shipping and verified authenticity.

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