| Mfr. No: | NSS40300MDR2G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 40V 6A LOW VCE(SAT) DUAL PNP |
| Datasheet: | NSS40300MDR2G Datasheet (PDF) |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 170mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1A, 2V |
| Power - Max | 653mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 266 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210095 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8542399000 |
| MXHTS | 85423999 |
| ECCN | EAR99 |
As a bipolar transistors - bjt component, the NSS40300MDR2G is manufactured and supplied by onsemi. Technical specifications for this part include transistor type: 2 PNP (Dual), current, collector (ic): 3A, voltage, collector emitter breakdown: 40V, vce saturation (max) @ ib, ic: 170mV @ 200mA, 2A, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 180 @ 1A, 2V. This part has a typical lead time of 266 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries NSS40300MDR2G in stock, backed by a genuine parts guarantee and quick dispatch.