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NSS40301MDR2G onsemi
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NSS40301MDR2G

Mfr. No: NSS40301MDR2G
Mfr.: onsemi
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT MATCHED LO VCE(SAT) SOIC8
Lifecycle: Active
⚙ Specifications
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 3A
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 115mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 1A, 2V
Power - Max 653mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,060
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 266 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541299000
TARIC 8542399000
MXHTS 85423999
ECCN EAR99
ℹ Product Overview

NSS40301MDR2G is a transistors component manufactured by onsemi. Among its key specs are transistor type: 2 NPN (Dual), current, collector (ic): 3A, voltage, collector emitter breakdown: 40V, vce saturation (max) @ ib, ic: 115mV @ 200mA, 2A, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 180 @ 1A, 2V. This part has a typical lead time of 266 Days from factory. Simplytronix offers NSS40301MDR2G in stock, verified authentic and ready for same-day dispatch.

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