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NST3946DP6T5G onsemi
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NST3946DP6T5G

Mfr. No: NST3946DP6T5G
Mfr.: onsemi
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT LESHAN DUAL COMPLMNT SOT-963
Lifecycle: Active
⚙ Specifications
Transistor Type 1 NPN, 1 PNP
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 350mW
Frequency - Transition 200MHz, 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-963
Supplier Device Package SOT-963
📦 Product Attributes
Packaging Reel
Standard Pack Qty 8000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,376
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 63 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210075
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

NST3946DP6T5G is a transistors part produced by onsemi for use across a range of applications. Key specifications include transistor type: 1 NPN, 1 PNP, current, collector (ic): 200mA, voltage, collector emitter breakdown: 40V, vce saturation (max) @ ib, ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, current, collector cutoff: - and DC current gain (hfe) (min) @ ic, vce: 100 @ 10mA, 1V. This part has a typical lead time of 63 Days from factory. Order NST3946DP6T5G from Simplytronix for authenticated stock and same-day order processing.

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