*For representation only.
NSV12100UW3TCG
| Mfr. No: | NSV12100UW3TCG |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT WDFN3 2*2 LOW VCE |
| Lifecycle: | Active |
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Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Vce Saturation (Max) @ Ib, Ic | 440mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Power - Max | 740 mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDFN Exposed Pad |
| Supplier Device Package | 3-WDFN (2x2) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
8,809
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 231 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
The NSV12100UW3TCG from onsemi falls under the transistors category. This part is specified with transistor type: PNP, current, collector (ic): 1 A, voltage, collector emitter breakdown: 12 V, vce saturation (max) @ ib, ic: 440mV @ 100mA, 1A, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 100 @ 500mA, 2V. This part has a typical lead time of 231 Days from factory. NSV12100UW3TCG is available through Simplytronix, sourced and verified for authenticity.
