*For representation only.
NSV1C300ET4G
| Mfr. No: | NSV1C300ET4G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V |
| Lifecycle: | Active |
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Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 2V |
| Power - Max | 2.1 W |
| Frequency - Transition | 100MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
7,619
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 266 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
onsemi's NSV1C300ET4G is a widely used transistors part in electronic designs. This component is defined by transistor type: PNP, current, collector (ic): 3 A, voltage, collector emitter breakdown: 100 V, vce saturation (max) @ ib, ic: 400mV @ 300mA, 3A, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 120 @ 1A, 2V. This part has a typical lead time of 266 Days from factory. Simplytronix supplies NSV1C300ET4G with same-day shipping and guaranteed authenticity.
