*For representation only.
NSV20201DMTWTBG
| Mfr. No: | NSV20201DMTWTBG |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 20V DUAL LOW VCE(SA T) FOR |
| Lifecycle: | Active |
⚙
Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Supplier Device Package | 6-WDFN (2x2) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
5,220
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 196 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
ℹ
Product Overview
NSV20201DMTWTBG is a transistors component manufactured by onsemi. Its datasheet lists transistor type: NPN, current, collector (ic): 3 A, voltage, collector emitter breakdown: 20 V, vce saturation (max) @ ib, ic: -, current, collector cutoff: - and DC current gain (hfe) (min) @ ic, vce: -. This part has a typical lead time of 196 Days from factory. Simplytronix offers NSV20201DMTWTBG in stock, verified authentic and ready for same-day dispatch.
