| Mfr. No: | NSV40300MZ4T1G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor AEC-Q101 |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 175 @ 1A, 1V |
| Power - Max | 2 W |
| Frequency - Transition | 160MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 (TO-261) |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Alternate Packaging | NSV40301MDR2G |
| Suggested Replacement |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 168 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
NSV40300MZ4T1G is a transistors component manufactured by onsemi. It features transistor type: PNP, current, collector (ic): 3 A, voltage, collector emitter breakdown: 40 V, vce saturation (max) @ ib, ic: 400mV @ 300mA, 3A, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 175 @ 1A, 1V. This part has a typical lead time of 168 Days from factory. Simplytronix offers NSV40300MZ4T1G in stock, verified authentic and ready for same-day dispatch.