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NSV40300MZ4T1G onsemi
*For representation only.

NSV40300MZ4T1G

Mfr. No: NSV40300MZ4T1G
Mfr.: onsemi
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 3.0 A, 40 V Low VCE(sat) PNP Power Bipolar Junction Transistor AEC-Q101
⚙ Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 175 @ 1A, 1V
Power - Max 2 W
Frequency - Transition 160MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging NSV40301MDR2G
Suggested Replacement
3,343
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 168 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290055
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

NSV40300MZ4T1G is a transistors component manufactured by onsemi. It features transistor type: PNP, current, collector (ic): 3 A, voltage, collector emitter breakdown: 40 V, vce saturation (max) @ ib, ic: 400mV @ 300mA, 3A, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 175 @ 1A, 1V. This part has a typical lead time of 168 Days from factory. Simplytronix offers NSV40300MZ4T1G in stock, verified authentic and ready for same-day dispatch.

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