*For representation only.
NSV60101DMTWTBG
| Mfr. No: | NSV60101DMTWTBG |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA |
| Lifecycle: | Active |
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Specifications
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Power - Max | 2.27W |
| Frequency - Transition | 180MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Supplier Device Package | 6-WDFN (2x2) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
2,947
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 224 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541290055 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
onsemi manufactures the NSV60101DMTWTBG, a transistors part used in electronic assemblies. Among its key specs are transistor type: 2 NPN (Dual), current, collector (ic): 1A, voltage, collector emitter breakdown: 60V, vce saturation (max) @ ib, ic: 180mV @ 100mA, 1A, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 120 @ 500mA, 2V. This part has a typical lead time of 224 Days from factory. You can source NSV60101DMTWTBG through Simplytronix, with fast shipping and verified authenticity.
