*For representation only.
NSV60200DMTWTBG
| Mfr. No: | NSV60200DMTWTBG |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT DUAL 60V 2A LOWVCES AT PNP |
| Lifecycle: | Active |
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Specifications
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA, 2V |
| Frequency - Transition | 155MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Supplier Device Package | 6-WDFN (2x2) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
9,135
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 224 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
ℹ
Product Overview
The NSV60200DMTWTBG from onsemi falls under the transistors category. This part is specified with transistor type: 2 PNP (Dual), vce saturation (max) @ ib, ic: 450mV @ 200mA, 2A, current, collector cutoff: 100nA (ICBO), DC current gain (hfe) (min) @ ic, vce: 150 @ 100mA, 2V, frequency, transition: 155MHz and operating temperature: -55°C ~ 150°C (TJ). This part has a typical lead time of 224 Days from factory. NSV60200DMTWTBG is available through Simplytronix, sourced and verified for authenticity.
