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| Mfr. No: | NSVEMT1DXV6T1G |
| Mfr.: | onsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT SS DUAL PURPOSE TRAN |
| Lifecycle: | Active |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500pA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Power - Max | 500mW |
| Frequency - Transition | 140MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Packaging | Reel |
| Standard Pack Qty | 4000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 154 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
As a transistors component, the NSVEMT1DXV6T1G is manufactured and supplied by onsemi. Among its key specs are transistor type: 2 PNP (Dual), current, collector (ic): 100mA, voltage, collector emitter breakdown: 60V, vce saturation (max) @ ib, ic: 500mV @ 5mA, 50mA, current, collector cutoff: 500pA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 120 @ 1mA, 6V. This part has a typical lead time of 154 Days from factory. Simplytronix carries NSVEMT1DXV6T1G in stock, backed by a genuine parts guarantee and quick dispatch.
