*For representation only.
NSVFSB560ALT1G
| Mfr. No: | NSVFSB560ALT1G |
| Mfr.: | onsemi |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors FSB560A-SN00165 |
| Lifecycle: | Active |
| Datasheet: | NSVFSB560ALT1G Datasheet (PDF) |
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Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 500mA, 2V |
| Power - Max | 500 mW |
| Frequency - Transition | 75MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
10,031
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 161 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| ECCN | EAR99 |
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Product Overview
The NSVFSB560ALT1G from onsemi falls under the transistors category. Technical specifications for this part include transistor type: NPN, current, collector (ic): 2 A, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: 300mV @ 200mA, 2A, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 250 @ 500mA, 2V. This part has a typical lead time of 161 Days from factory and ships with a full manufacturer datasheet available for download. NSVFSB560ALT1G is available through Simplytronix, sourced and verified for authenticity.
